Semiconductor memory device having bidirectional potential barri

Details Semiconductor memory device having bidirectional potential barri Semiconductor memory device having bidirectional potential barri

1992-03-17

1996-01-09

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 365203, 257906, G11C 1136

Patent

active

054834821

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells each including an element with a potential barrier serving as a switching element and a capacitor one terminal of which is connected to the switching element. The memory cells are disposed in a matrix arrangement. Terminals of the respective capacitors which are not connected to the switching elements are connected to each other in intersection with bit lines in the memory cell arrangement to thereby form word lines. Alternatively, the terminals of the respective capacitors connected to the switching elements may be connected to each other in intersection with the bit lines to thereby form word lines.

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