Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-04
1999-03-30
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257302, 257306, H01L 2900
Patent
active
058893016
ABSTRACT:
A dynamic random access memory having a high capacitance capacitor is described. Field oxide areas on the surface of a semiconductor substrate surround device areas including field effect devices, gate dielectric and gate electrode structures on the substrate in the device areas. Source/drain structures associated with the gate electrode structures lie within the device areas of the semiconductor substrate. An insulating layer covers the device areas. A capacitor structure comprises a bottom electrode formed by the central cylindrical portion of a polysilicon layer which electrically contacts the source/drain structures through an opening in the insulating layer, a storage node overlying the insulating layer, the storage node having an E-shape with three prongs wherein the prongs point upward from the central cylindrical portion of the polysilicon layer, a capacitor dielectric layer overlying all surfaces of the storage node, and a top plate electrode layer overlying the capacitor dielectric layer on all surfaces of the storage node to complete the capacitor.
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Ackerman Stephen B.
Martin-Wallace Valencia
Pike Rosemary L.S.
Saile George O.
Vanguard International Semiconductor Corporation
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