Semiconductor memory device having amorphous contact plug

Details Semiconductor memory device having amorphous contact plug Semiconductor memory device having amorphous contact plug

2011-08-09

2011-08-09

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257SE27104

Reexamination Certificate

active

07994556

ABSTRACT:
A semiconductor memory device includes: a semiconductor substrate; a field effect transistor formed on the semiconductor substrate; an interlayer dielectric layer formed on the field effect transistor; a contact plug connected to the field effect transistor through the interlayer dielectric layer; and a ferroelectric capacitor disposed on the interlayer dielectric layer and connected to the contact plug, wherein a contact surface between a lower electrode of the ferroelectric capacitor and the contact plug is smaller than a contact plug surface of the contact plug.

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English translation of JP2004311868 A.

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