Semiconductor memory device having a sub-amplifier...

Details Semiconductor memory device having a sub-amplifier... Semiconductor memory device having a sub-amplifier...

2005-05-17

2005-05-17

Tran, M. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S230060

Reexamination Certificate

active

06894940

ABSTRACT:
A sense amplifier driving line is connected to the source of an N-channel MOS transistor. Accordingly, even if a control signal attains H level, a sub-amplifier will not operate. This is because the sense amplifier driving line and an LIO line pair both attain a precharge potential, and a gate-source voltage of an N-channel MOS transistor attains 0V. Thus, it is not necessary to add a circuit configuration for supplying a signal notifying of activation of a row block, and a semiconductor memory device with a smaller area is obtained.

REFERENCES:
patent: 5596521 (1997-01-01), Tanaka et al.
patent: 5604697 (1997-02-01), Takahashi et al.
patent: 6147925 (2000-11-01), Tomishima et al.
patent: 6-187782 (1994-07-01), None
Sakata, et al. “A DDR/SDR-Compatible SDRAM Design with a Three-Size Flexible Column Redundancy” Symposium on VLSI Circuits Digest of Technical Papers (2000) pp. 116-119.

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