Semiconductor memory device having a stack-type capacitor

Static information storage and retrieval – Systems using particular element – Capacitors

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Details

257303, 257306, G11C 1124

Patent

active

054146550

ABSTRACT:
A semiconductor device of this invention includes a semiconductor substrate, at least one memory cell section including a number of memory cells each formed of a capacitor and a MOS transistor formed on the semiconductor substrate, a peripheral circuit section formed on the semiconductor substrate in an area other than an area in which the memory cell section is formed, and a wiring layer serving as an upper electrode of the capacitor and serving as a wire of the peripheral circuit section.

REFERENCES:
patent: 4994893 (1991-02-01), Ozaki et al.
patent: 5025301 (1991-06-01), Shimizu
patent: 5075745 (1991-12-01), Ino

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