Semiconductor memory device having a refresh cycle changing...

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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Details

C365S228000, C365S229000, C365S233100, C365S185250, C711S105000, C711S106000, C714S754000

Reexamination Certificate

active

07742356

ABSTRACT:
A semiconductor memory device includes a first refresh cycle changing circuit that changes a refresh cycle according to an auto-refresh mode, without giving influence to a refresh cycle according to a self-refresh mode, and a second refresh cycle changing circuit that changes a refresh cycle according to the self-refresh mode, without giving influence to a refresh cycle according to the auto-refresh mode. In this way, according to the present invention, the refresh cycle according to the auto-refresh mode and the refresh cycle according to the self-refresh mode can be controlled independently. Therefore, refresh operation considering the characteristic of each mode can be executed.

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Japanese Office Action dated Dec. 2, 2008, with partial English Translation.

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