Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-12-04
2010-06-22
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S228000, C365S229000, C365S233100, C365S185250, C711S105000, C711S106000, C714S754000
Reexamination Certificate
active
07742356
ABSTRACT:
A semiconductor memory device includes a first refresh cycle changing circuit that changes a refresh cycle according to an auto-refresh mode, without giving influence to a refresh cycle according to a self-refresh mode, and a second refresh cycle changing circuit that changes a refresh cycle according to the self-refresh mode, without giving influence to a refresh cycle according to the auto-refresh mode. In this way, according to the present invention, the refresh cycle according to the auto-refresh mode and the refresh cycle according to the self-refresh mode can be controlled independently. Therefore, refresh operation considering the characteristic of each mode can be executed.
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Japanese Office Action dated Dec. 2, 2008, with partial English Translation.
Dono Chiaki
Koshikawa Yasuji
Elpida Memory Inc.
McGinn IP Law Group PLLC
Nguyen Van-Thu
Wendler Eric
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