Semiconductor memory device having a redundancy information...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S201000, C365S190000, C365S189020, C365S230030, C365S185090, C365S185230, C365S185110

Reexamination Certificate

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07411844

ABSTRACT:
A semiconductor memory device (M) includes a memory array (MA) having a plurality of memory cells, a redundancy array (RA) having a plurality of memory cells, a non-volatile redundancy information memory (NVR) having a plurality of memory cells for storing redundancy information, and a redundancy control unit (RU) for selecting either memory cells in the memory array (MA) or memory cells in the redundancy array (RA). In one example, the non-volatile redundancy information memory (NVR) is connected directly to the redundancy control unit (RU) by means of at least one sense amplifier (SA).

REFERENCES:
patent: 6246616 (2001-06-01), Nagai et al.
patent: 6421285 (2002-07-01), Matsuzaki et al.
patent: 6625063 (2003-09-01), Kim
patent: 6967879 (2005-11-01), Mizukoshi
patent: 7102942 (2006-09-01), Park
patent: 7116590 (2006-10-01), Blodgett
patent: 7274597 (2007-09-01), Srowik et al.

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