Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-11-30
2008-08-12
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000, C365S190000, C365S189020, C365S230030, C365S185090, C365S185230, C365S185110
Reexamination Certificate
active
07411844
ABSTRACT:
A semiconductor memory device (M) includes a memory array (MA) having a plurality of memory cells, a redundancy array (RA) having a plurality of memory cells, a non-volatile redundancy information memory (NVR) having a plurality of memory cells for storing redundancy information, and a redundancy control unit (RU) for selecting either memory cells in the memory array (MA) or memory cells in the redundancy array (RA). In one example, the non-volatile redundancy information memory (NVR) is connected directly to the redundancy control unit (RU) by means of at least one sense amplifier (SA).
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Ben-Ari Nimrod
Nitzan Ifat
Infineon Technologies Flash GmbH & Co. KG
Slater & Matsil L.L.P.
Tran Andrew Q
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