Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1997-09-22
1999-04-06
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Bad bit
36523003, 3652257, G11C 700
Patent
active
058927182
ABSTRACT:
A semiconductor memory device comprises memory cell blocks M1-Mn disposed for respective I/O pads and a redundant memory cell block MR, a programmable circuit programmable based on a failed information for controlling transfer switches T1 and T2 to couple each of the I/O pads with corresponding memory cell block or with adjacent memory cell block by excepting a failed memory cell block and including the redundant memory cell block based on the failed information. In a roll call test mode, the I/O pads coupled with adjacent memory cell blocks output a fixed value regardless of data stored in the memory cell blocks to notify a failed memory cell block for facilitating failure analysis.
REFERENCES:
patent: 5661689 (1997-08-01), Shinkai
Le Vu A.
NEC Corporation
LandOfFree
Semiconductor memory device having a redundancy function does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having a redundancy function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a redundancy function will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1377139