Semiconductor memory device having a redundancy function

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

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Details

36523003, 3652257, G11C 700

Patent

active

058927182

ABSTRACT:
A semiconductor memory device comprises memory cell blocks M1-Mn disposed for respective I/O pads and a redundant memory cell block MR, a programmable circuit programmable based on a failed information for controlling transfer switches T1 and T2 to couple each of the I/O pads with corresponding memory cell block or with adjacent memory cell block by excepting a failed memory cell block and including the redundant memory cell block based on the failed information. In a roll call test mode, the I/O pads coupled with adjacent memory cell blocks output a fixed value regardless of data stored in the memory cell blocks to notify a failed memory cell block for facilitating failure analysis.

REFERENCES:
patent: 5661689 (1997-08-01), Shinkai

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