Semiconductor memory device having a large storage capacity and

Details Semiconductor memory device having a large storage capacity and Semiconductor memory device having a large storage capacity and

1995-03-10

1997-10-14

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 365 63, 365154, 257903, 257904, G11C 1140

Patent

active

056778872

ABSTRACT:
A semiconductor static memory device, which has an increased storage capacity without imposing an increased access time, includes first, second and third metallic layers. To begin, word lines for the transfer MOSFETS are formed of the same polysilicon layer used to form the gate electrodes of the transfer MOSFETs of the memory device. A metallic layer of the first layer is used for local word lines, with the polysilicon word lines and local word lines being connected at their ends or inside of cell arrays. A metallic layer of the second layer is used for bit layers, and a metallic layer of the third layer is used for main word lines. Consequently, the word lines have a decreased time constant, allowing fast memory access. Each of sense amplifiers used in the memory device are formed with MOSFETs, which are disposed divisionally in adjacent locations. Preferably the gate electrodes of the divided MOSFETs are located symmetrically. In this case, the offset voltage of the sense amplifiers decreases significantly.

REFERENCES:
patent: 4402063 (1983-08-01), Wittwer
patent: 4730280 (1988-03-01), Aoyama
patent: 4791616 (1988-12-01), Taguchi et al.
patent: 5175604 (1992-12-01), Nogami

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