Semiconductor memory device having a floating gate

Details Semiconductor memory device having a floating gate Semiconductor memory device having a floating gate

1997-03-27

1998-10-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, H01L 29788, H01L 2976, H01L 31036, H01L 31112

Patent

active

058180834

ABSTRACT:
A floating gate semiconductor memory device comprises a polycrystal semiconductor substrate provided on an insulating substrate, and a floating gate electrode and a control gate electrode are provided on the polycrystal semiconductor substrate with an intervening tunneling oxide film. The polycrystal semiconductor substrate is formed by recrystallizing an amorphous semiconductor layer deposited on the insulating substrate by a thermal annealing process. The tunneling oxide film has a reduced thickness for allowing tunneling of electrons therethrough.

REFERENCES:
patent: 4608585 (1986-08-01), Keshtbod
patent: 5096854 (1992-03-01), Saito et al.
patent: 5111260 (1992-05-01), Malhi et al.
patent: 5264721 (1993-11-01), Gotou

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