Semiconductor memory device having a ferroelectric substance as

Details Semiconductor memory device having a ferroelectric substance as Semiconductor memory device having a ferroelectric substance as

1991-01-23

1993-07-13

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365141, 257295, G11C 1122

Patent

active

052278557

ABSTRACT:
An insulating layer is formed on a transistor having a source region/drain region and a gate electrode. Contact holes are formed in this insulating layer in association with the source region/drain region and the gate electrode. A memory element having a ferroelectric substance layer is provided in that contact hole which is associated with the source region/drain region. This memory element comprises a first electrode provided on the source region/drain region, a ferroelectric substance layer provided on the first electrode, and a second electrode provided on the ferroelectric substance layer. Providing this memory element in the contact hole which is associated with the source region/drain region can make cells flatter and permit metal wires to be surely formed in the contact holes.

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Moazzami et al., A Ferroelectric Dram Cell For High-Density NVRAM's, IEEE Electron Device Letters, vol. 11, No. 10, 1990, pp. 454-456.
Arnett, Ferroelectric FET Device, IBM Technical Disclosure Bulletin, vol. 15, No. 9, Feb. 1973, p. 2,825.
W. I. Kinney, W. Shepherd, W. Miller, J. Evans, and R. Womack, "A Non-Volatile Memory Cell Based on Ferroelectric Storage Capacitors," pp. 850-851, IEDM 87, Dec. 1987.

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