Semiconductor memory device having a DRAM cell structure and...

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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C365S207000, C365S233500

Reexamination Certificate

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06868027

ABSTRACT:
A semiconductor memory device includes a memory cell array including a plurality of memory cells having a DRAM cell structure and is treated as a SRAM memory device without controlling the data refreshing cycle for the memory cells. The refreshing cycle is separated into a read operation and a write operation, which sandwich therebetween a read/write operation for the input address of the memory cell. The data read in the refreshing cycle is saved in a refreshing sense amplifier during the read/write operation and stored in the memory cell after the read/write operation.

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patent: 6714479 (2004-03-01), Takahashi et al.
patent: 6721224 (2004-04-01), Eaton et al.
patent: 2002-074944 (2002-03-01), None

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