Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-03-15
2005-03-15
Phan, Trong (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S207000, C365S233500
Reexamination Certificate
active
06868027
ABSTRACT:
A semiconductor memory device includes a memory cell array including a plurality of memory cells having a DRAM cell structure and is treated as a SRAM memory device without controlling the data refreshing cycle for the memory cells. The refreshing cycle is separated into a read operation and a write operation, which sandwich therebetween a read/write operation for the input address of the memory cell. The data read in the refreshing cycle is saved in a refreshing sense amplifier during the read/write operation and stored in the memory cell after the read/write operation.
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Choate Hall & Stewart
NEC Electronics Corporation
Phan Trong
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