Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1987-09-01
1989-01-17
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365149, G11C 700, G11C 1124
Patent
active
047991976
ABSTRACT:
A semiconductor memory device comprises a memory cell array comprising memory cells; a plurality of pairs of bit lines which are coupled to the memory cells and a data bus, each bit line being divided into at least two pairs of bit line parts; at least one sense amplifier provided between the pairs of bit line parts in each of the pairs of bit lines, for sensing a difference in potential between bit line parts in each pair, the sense amplifier being formed with complementary metal oxide semiconductor transistors; and at least a pair of transfer gates provided between a non-data bus side and a data bus side of the sense amplifier, the pair of transfer gates being held in an off-state when the sense amplifier is activated.
REFERENCES:
patent: 4363111 (1982-12-01), Heightley et al.
patent: 4366559 (1982-12-01), Misaizu et al.
patent: 4606010 (1986-08-01), Saito
1984 IEEE International Solid-State Circuits Conference, Feb. 24, 1984, pp. 278, 279.
Electronics, Jun. 14, 1984, AMR Mohsen et al., "C-MOS 256-K RAM", pp. 138-143.
1984 IEEE International Solid-State Circuits Conference, Feb. 22, 1984, pp. 104-105.
Kodama Yukinori
Mochizuki Hirohiko
Nakano Masao
Nomura Hidenori
Ohira Tsuyoshi
Fujitsu Limited
Fujitsu VLSI Limited
Moffitt James W.
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