Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1988-11-10
1990-10-02
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Semiconductive
365149, 365156, 365185, 357 233, 357 236, 437 52, 148DIG148, G11C 1134, H01L 2978
Patent
active
049611658
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having source and drain regions each having a conduction type opposite to that of the semiconductor substrate, an insulation film formed on a main surface of the semiconductor substrate having first and second contact windows, and a gate electrode formed on the insulation film so as to be located between the source and drain regions. The semiconductor substrate has a charge barrier layer which has the same conduction type as the semiconductor substrate and which has an impurity concentration higher than that of the semiconductor substrate. The charge barrier layer is formed so that a depth (d.sub.1) of the charge barrier layer located under the gate electrode measured from the main surface of the semiconductor substrate is smaller than a depth (d.sub.2) of the charge barrier layer located under the source and drain regions measured from the main surface of the semiconductor substrate.
REFERENCES:
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4644386 (1987-02-01), Nishizawa et al.
patent: 4763181 (1988-08-01), Tasch, Jr.
Fujitsu Limited
Garcia Alfonso
Hecker Stuart N.
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