Semiconductor memory device having a capacitor

Details Semiconductor memory device having a capacitor Semiconductor memory device having a capacitor

1993-05-20

1996-01-02

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257401, H01L 2968, H01L 2978, H01L 2992

Patent

active

054811279

ABSTRACT:
In a semiconductor device with improved lifetime of a capacitor insulating film, a standing wall portion forming a capacitor lower electrode has a substantially round tip end and a side surface, of which roughness is not more than 200 .ANG.. This suppresses concentration of electric field at the tip end of the standing wall portion, and also suppresses irregularity in electric field at its side surface. Thereby, the lifetime of the capacitor insulating film is improved.

REFERENCES:
patent: 5023683 (1991-06-01), Yamada
patent: 5208479 (1993-05-01), Mathews et al.
patent: 5218219 (1993-06-01), Ajika et al.
patent: 5318920 (1994-06-01), Hayashide
"Glow Discharge Processes", by Brian Chapman, A Wiley-Interscience Publication, 1980, pp. 247-248.
"A Novel Stacked Capacitor Cell With Dual Cell Plate for 64Mb DRAMs", by H. Arima et al., IEEE 1990, pp. 651-654.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" by Toru Kaga et al., IEEE Transactions on Electron Device, vol. 38, No. 2, Feb. 1991, pp. 255-261.
"New Stacked Capcitor Cell with Thin Box Structured Storage Node", by S. Inoue et al., Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989 pp. 141-144.

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