Semiconductor memory device having a bitline amplified to a...

Details Semiconductor memory device having a bitline amplified to a... Semiconductor memory device having a bitline amplified to a...

2006-02-17

2008-12-23

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S208000, C365S189090, C365S203000, C365S149000

Reexamination Certificate

active

07468900

ABSTRACT:
In order to omit a reset transistor between a storage node and a cell plate line of a memory cell, a cell plate line is fixed to a potential substantially equal to a ground potential and a bit line is driven with positive and negative voltages.

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H. Hirano, et al., “High Density and Low Power Nonvolatile FeRAM with Non-Driven Plate and Selected Driven Bit-line Scheme”, 2004 Symposium on VLSI Circuits, Digest of Technical Papers, pp. 446-447, Jun. 2004.

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