Semiconductor memory device having a BICMOS memory cell

Details Semiconductor memory device having a BICMOS memory cell Semiconductor memory device having a BICMOS memory cell

1990-03-28

1991-10-22

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

3652256, 357 34, 357 43, G11C 1134, H01L 2972

Patent

active

050601946

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells each having a bipolar transistor whose collector-emitter voltage V.sub.CE is controlled according to the base potential to satisfy the condition of I.sub.BE <I.sub.CB when the forward base current in the base-emitter path and the reverse base current in the collector-base path are respectively expressed by I.sub.BE and I.sub.CB and a switching element connected to the bipolar transistor, word lines, bit lines and emitter electrode lines connected to the memory cells, and functions as a dynamic memory cell in the data storing operation and as a gain memory cell in the readout operation.

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patent: 4901127 (1990-02-01), Chow et al.

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