Semiconductor memory device having a...

Details Semiconductor memory device having a... Semiconductor memory device having a...

2007-11-06

2007-11-06

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000, C365S209000, C365S236000, C365S189070, C365S189050

Reexamination Certificate

active

11384920

ABSTRACT:
By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter5so as to be stored in a readout value register. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register to one another. By the use of the VCO, the integrating capacitor for the current or the generation of a reference pulse may be eliminated.

REFERENCES:
patent: 4596001 (1986-06-01), Baba
patent: 4881203 (1989-11-01), Watanabe et al.
patent: 5043945 (1991-08-01), Bader
patent: 5377149 (1994-12-01), Gaultier
patent: 6205073 (2001-03-01), Naji
patent: 2001-325791 (2001-11-01), None
patent: 2002-32983 (2002-01-01), None
patent: WO 01/24185 (2001-04-01), None

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