Semiconductor memory device formed of a SOI-type transistor and

Details Semiconductor memory device formed of a SOI-type transistor and Semiconductor memory device formed of a SOI-type transistor and

1986-05-23

1988-12-13

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Capacitors

365174, 365182, 357 236, G11C 1124, G11C 1134, G11C 700

Patent

active

047916109

ABSTRACT:
A semiconductor memory (DRAM) device comprises memory cells, each of which is composed of an FET and a capacitor. The FET has an SOI structure. The capacitor is composed of a dielectric layer as an insulating layer for the SOI structure, an upper capacitor electrode as a semiconductor layer for the SOI structure, and a lower capacitor electrode as a semiconductor substrate. The substrate is biased with a voltage at an intermediate level between a first storage voltage and a second storage voltage.

REFERENCES:
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4467450 (1984-08-01), Kuo
patent: 4613889 (1986-09-01), Kuo
patent: 4646118 (1987-02-01), Takemae
patent: 4686552 (1987-08-01), Terg et al.
IEEE Electron Device Letters, vol. EDL-5, No. 5, May, 1984, pp. 151-153, IEEE, New York, New York, U.S., J. C. Sturm et al, "A Three Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon".

Affiliated with

Also associated with

Rating

Semiconductor memory device formed of a SOI-type transistor and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device formed of a SOI-type transistor and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device formed of a SOI-type transistor and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2201000