Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189120, C365S230060
Reexamination Certificate
active
07038957
ABSTRACT:
A semiconductor memory device is capable of testifying over-driving quantity depending on position. A semiconductor memory device includes a plurality of in-bank over-drivers for temporarily applying a high voltage to a normal power that is supplied to a memory array cell within a bank; a plurality of out-bank over-drivers arranged outside the bank for temporarily applying the high voltage to the normal power that is supplied to the bank; a plurality of PERI over-drivers arranged at the peripheral area for temporarily applying the high voltage to the normal power; a mode register set for receiving a signal to select one of the over-drivers; and a decoder activated in response to a test mode signal for decoding the set value of the MRS to selectively drive the over-driver arranged at a desired position and having desired driving power among the in-bank and out-bank over-drivers and the PERI over-drivers.
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patent: 6347063 (2002-02-01), Dosaka et al.
patent: 6788616 (2004-09-01), Takahashi
patent: 2005/0007835 (2005-01-01), Lee et al.
patent: 2002-074961 (2002-03-01), None
patent: 2004-146046 (2004-05-01), None
Kim Kwan-Weon
Kwack Seung-Wook
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Nguyen Tuan T.
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