Static information storage and retrieval – Read/write circuit – Plural use of terminal
Patent
1990-06-29
1999-02-23
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Plural use of terminal
36523003, 365227, G11C 1604
Patent
active
058751327
ABSTRACT:
A semiconductor memory device includes a plurality of input/output terminals (I/O1 to I/O4), a plurality of memory cell groups (1 to 4) and a plurality of sense amplifiers (31 to 34). A plurality of decision circuits (81 to 84) and a plurality of selection circuits (91 to 94) are provided in association with the input/output terminals (I/O1 to I/O4). A high voltage is applied to the input/output terminals that are not in use. This fixedly sets the corresponding sense amplifier groups to the non-activated state by means of the corresponding decision circuit and the selection circuit.
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"E-Prom Doubles Bit Density Without Adding A Pin", Bob Greene, et al., Electronics/Aug. 16, 1979, pp. 126-129.
Mitsubishi Denki & Kabushiki Kaisha
Zarabian A.
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