Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-11-07
2006-11-07
Mai, Son (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S210130, C365S222000
Reexamination Certificate
active
07133306
ABSTRACT:
To a bit line to which a memory cell having a ferroelectric capacitor is connected, a guarantee cell having a ferroelectric capacitor is connected. During a read operation of data from the memory cell, data is read out from the memory cell, and the data read out from the memory cell by destructive reading is written automatically to the guarantee cell, so that the data is retained securely as nonvolatile binary data regardless of operating condition, and thus loss of data can be suppressed.
REFERENCES:
patent: 5615145 (1997-03-01), Takeuchi et al.
patent: 5694353 (1997-12-01), Koike
patent: 5726930 (1998-03-01), Hasegawa et al.
patent: 5880989 (1999-03-01), Wilson et al.
patent: 5969979 (1999-10-01), Hirano
patent: 6501674 (2002-12-01), Ashikaga
patent: 6853576 (2005-02-01), Kato et al.
patent: 2003/0031042 (2003-02-01), Yamamoto et al.
patent: 2004/0017704 (2004-01-01), Yamaoka et al.
patent: 5-089692 (1993-04-01), None
patent: 8-171793 (1996-07-01), None
patent: 9-288893 (1997-11-01), None
patent: 2000-187989 (2000-07-01), None
Arent & Fox PLLC
Mai Son
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