Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2007-05-15
2007-05-15
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S196000
Reexamination Certificate
active
11321862
ABSTRACT:
A semiconductor memory device includes a first cell block having a plurality of unit cells for providing a data signal included in a unit cell through a corresponding bit line pair; a plurality of bit line sense amplifying blocks for sensing and amplifying the data signal delivered to the corresponding bit line pair by using the power supply voltage and a low voltage which is lower than the ground voltage; a decoding unit for generating a plurality of decoding signals to provide the plurality of decoding signals into the plurality of bit line sense amplifying blocks respectively in order to deliver the sensed and amplified data signal to a data line; and a low voltage generation unit for generating the low voltage by using a parasitic capacitor generated at a signal line of the decoding signal as a storing capacitor.
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Ahn Jin-Hong
Kang Hee-Bok
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Tran Michael
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