Semiconductor memory device enhancing reliability in data...

Details Semiconductor memory device enhancing reliability in data... Semiconductor memory device enhancing reliability in data...

2005-03-18

2009-06-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189090, C365S189110

Reexamination Certificate

active

07542363

ABSTRACT:
An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current supplied via an internal data line is produced from the internal power supply voltage. It is possible to provide a nonvolatile semiconductor memory device, which can perform a precise sense operation and an accurate reading of data even under a low power supply voltage condition.

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Japanese Notice of Grounds of Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2004-095876 dated Mar. 10, 2009.

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