Semiconductor memory device employing normally-on type GaAs-MESF

Static information storage and retrieval – Systems using particular element – Flip-flop

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365190, 307279, G11C 1100

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active

047648970

ABSTRACT:
A GaAs (gallium arsenide) semiconductor memory device includes a plurality of memory cells connected in a matrix form by employing a plurality of bit lines and of word lines, and of word line drivers. The memory device is operable under a single power supply. Transfer gates of the memory cells are normally-on type GaAs metal-semiconductor field effect transistors (MESFET's). A parallel circuit including a Schottky diode and a switching GaAs-MESFET is interposed between commonly-connected sources of driver MESFET's of each of the memory cells and the ground line, so that a higher potential of the commonly-connected sources is clamped due to the clamping effect of the Schottky diode when the switching GaAs-MESFET is turned off.

REFERENCES:
patent: 4438351 (1984-03-01), Schuermeyer
patent: 4665508 (1987-05-01), Chang
Technical Digest, 1984 GaAs IC Symposium, p. 121, "Processing Technologies for GaAs Memory LSIs"; Y. Ishii et al; Oct. 1984.
Technical Digest, 1984 GaAs IC Symposium, p. 117 "A GaAs 4K Bit Static RAM with Normally-on and -off Combination Circuit".
Technical Digest, 1983 GaAs IC Symposium p. 74 "Ultra-Low Power, High Speed GaAs 256-Bit Static RAM", S. J. Lee et al. Oct. 1983.

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