Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-10-01
2010-02-16
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189140, C365S189160
Reexamination Certificate
active
07663906
ABSTRACT:
A semiconductor memory device includes: a memory section; and a control section that controls writing and reading of data with respect to the memory section, wherein the memory section includes a first memory region formed from nonvolatile memory cells, each of the memory cells storing binary data corresponding to a first polarization state and a second polarization state; and the control section controls, for all of the memory cells included in the first memory region, such that, before writing data to each of the memory cells based on new data externally inputted, the memory cell is polarized in the first polarization state, and then the memory cell is further polarized in the second polarization state.
REFERENCES:
patent: 5986920 (1999-11-01), Tada
patent: 6327173 (2001-12-01), Braun
patent: 6522570 (2003-02-01), Basceri et al.
patent: 6618284 (2003-09-01), Shimada et al.
patent: 6795351 (2004-09-01), Sakai
patent: 6941505 (2005-09-01), Yada et al.
patent: 6990005 (2006-01-01), Saito
patent: 2005/0057957 (2005-03-01), Masui
patent: 2005/0281113 (2005-12-01), Yada et al.
patent: 61-273651 (1986-12-01), None
patent: 02-285443 (1990-11-01), None
patent: 10-162588 (1998-06-01), None
patent: 11-134874 (1999-05-01), None
patent: 11-162178 (1999-06-01), None
patent: 2003-006053 (2003-01-01), None
patent: 2004-288282 (2004-10-01), None
patent: 2005-259041 (2005-09-01), None
patent: WO-2005-81093 (2005-09-01), None
Bui Tha-O
Harness & Dickey & Pierce P.L.C.
Phung Anh
Seiko Epson Corporation
LandOfFree
Semiconductor memory device, data storage device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, data storage device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device, data storage device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4225688