Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2011-05-10
2011-05-10
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S196000, C365S230010, C365S222000, C365S230060, C365S189040
Reexamination Certificate
active
07940583
ABSTRACT:
There are provided are a plurality of memory mats, a sub-word driver that accesses a normal memory cell irrespective of whether a row address to which access is requested is a defective address, a sub-word driver that accesses a redundant memory cell belonging to a memory mat different from the normal memory cell indicated by the row address, when the row address is a defective address. According to the present invention, the normal memory cell and a redundant memory cell belong to memory mats different to each other, and thus the normal memory cell can be accessed concurrently with determining operation of the repair determining circuit.
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Yoshiro Riho et al., USPTO Office Action, 12/320,891, Nov. 19, 2010, 16 pages.
Koshikawa Yasuji
Kubouchi Shuichi
Matsumoto Yasuhiro
Noda Hiromasa
Riho Yoshiro
Elpida Memory Inc.
Foley & Lardner LLP
Le Thong Q
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