Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-01-24
2006-01-24
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189090, C365S226000, C365S227000
Reexamination Certificate
active
06990031
ABSTRACT:
In a semiconductor memory device which requires a refresh operation, a control method stops supplying a word line voltage which is a boosted voltage higher than an external supply voltage, a memory array substrate voltage which is a negative voltage supplied to a semiconductor substrate, and a bit line precharge voltage for use in reproducing data held in memory cells for a predetermined period at the end of each refresh operation. In this event, voltage output terminals of the word line and memory array substrate voltages are respectively driven to a ground potential. For recovering these voltages, the delivery of the word line voltage is stopped until the memory array substrate voltage rises to some extent.
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Hashimoto Takeshi
Ito Yutaka
Elpida Memory Inc.
Hayes & Soloway P.C.
Nguyen Tan T.
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