Semiconductor memory device containing antifuse write...

Details Semiconductor memory device containing antifuse write... Semiconductor memory device containing antifuse write...

2007-08-15

2009-12-01

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S096000, C365S226000, C365S227000

Reexamination Certificate

active

07626881

ABSTRACT:
A semiconductor memory device that enables the reduction of the circuit scale of the antifuse write voltage generation circuit. The semiconductor memory device has a first internal power supply generation circuit that boosts an external power supply voltage to generate a first internal power supply, a memory core to which the first internal power supply is supplied, an antifuse memory for writing predetermined information, and also a write voltage generation circuit that boosts the first internal power supply to generate an antifuse write voltage.

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Korean Office Action dated Feb. 27, 2009.

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