Semiconductor memory device comprising memory cells with...

Details Semiconductor memory device comprising memory cells with... Semiconductor memory device comprising memory cells with...

2007-07-31

2007-07-31

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S330000, C257S317000

Reexamination Certificate

active

10921766

ABSTRACT:
Transistor bodies of semiconductor material located at a main surface of a semiconductor substrate between shallow trench isolations are provided with a rounded or curved upper surface. A floating gate electrode is arranged above said upper surface and electrically insulated from the semiconductor material by a tunnel dielectric having essentially the same tiny thickness throughout a primary tunnel area encompassing the area of curvature. The floating gate electrode may bridge the transistor body and is covered with a coupling dielectric provided for a control gate electrode, which forms part of a wordline.

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