Semiconductor memory device comprising different type memory cel

Static information storage and retrieval – Read/write circuit – For complementary information

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365149, G11C 700

Patent

active

047991968

ABSTRACT:
A semiconductor memory device including a plurality of word lines and a plurality of bit lines; a plurality of memory cells connected between one of the word lines and one of the bit lines, at least one of the memory cells connected to the word lines being of a first type having an N channel type transfer gate transistor, at least one of the memory cells connected to the word lines being of a second type having a P channel type transfer gate transistor; and means for applying a selection signal to a selected word line, the selection signal having one of two opposite polarities in accordance with an access to the first type memory cells and an access to the second type memory cells.

REFERENCES:
patent: 4380803 (1983-04-01), Tuan

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