Semiconductor memory device comprising a plurality of static...

Details Semiconductor memory device comprising a plurality of static... Semiconductor memory device comprising a plurality of static...

2011-01-25

2011-01-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S226000, C365S230060

Reexamination Certificate

active

07876625

ABSTRACT:
A driver power supply circuit stepping down a power supply voltage is arranged at a power supply node of a word line driver. The driver power supply circuit includes a non-silicide resistance element of N+ doped polycrystalline silicon, and a pull-down circuit lowering a voltage level of the driver power supply node. The pull-down circuit includes a pull-down transistor having the same threshold voltage characteristics as a memory cell transistor pulling down a voltage level of the driver power supply node, and a gate control circuit adjusting at least a gate voltage of the pull-down transistor. The gate control circuit corrects the gate potential of the pull-down transistor in a manner linked to variations in threshold voltage of the memory cell transistor.

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