Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-03-02
2008-11-18
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S211000, C365S191000
Reexamination Certificate
active
07453754
ABSTRACT:
A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.
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Kawabata Kuninori
Shirota Akinobu
Arent & Fox LLP
Fujitsu Limited
Graham Kretelia
Hoang Huan
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