Semiconductor memory device capable of testing data line...

Details Semiconductor memory device capable of testing data line... Semiconductor memory device capable of testing data line...

2005-10-04

2005-10-04

Nelms, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S200000, C365S201000

Reexamination Certificate

active

06952372

ABSTRACT:
In a shift switch circuit for replacing a data line, a transmission gate circuit connecting node N2 corresponding to ith write data line to node N4 corresponding to ith read data line is provided. An operation of the shift switch circuit can be confirmed according to whether or not an output corresponding to provided data input signal D<i> is observed as data output signal Q<i>. Preferably, a transmission gate connecting i+1th write data line to an output data line is further provided, in order to further ensure operation confirmation. When a fuse circuit is set to replace a data line, ratio of successful chip repairing will be higher.

REFERENCES:
patent: 5982679 (1999-11-01), Ferrant
patent: 6072737 (2000-06-01), Morgan et al.
patent: 6324657 (2001-11-01), Fister et al.
patent: 11-250688 (1999-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device capable of testing data line... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device capable of testing data line..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of testing data line... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3471741