Semiconductor memory device capable of storing high potential le

Details Semiconductor memory device capable of storing high potential le Semiconductor memory device capable of storing high potential le

1996-09-25

1998-02-17

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365149, 36523006, 327 51, G11C 700

Patent

active

057198144

ABSTRACT:
In a semiconductor memory device, a row decoder is connected to a plurality of word lines to select one of the plurality of word lines in response to a row address. A word line driving section drives, in response to a row address strobe signal, the selected word line to a first potential higher by a predetermined potential than a predetermined second potential, for a read or write operation to a selected memory cell connected to the selected word line and a selected pair of bit lines. The second potential is higher than a power supply higher side potential. A sense amplifier activating section issues sense amplifier activating signals for the write operation to the selected memory cell in response to a sense control signal such that a data having a potential higher than the power supply higher side potential can be written or rewritten in the selected memory cell. Each of a plurality of sense amplifiers amplifies the data on corresponding pair of bit lines in response to the sense amplifier activating signals. In the read operation, the read data is outputted from an input/output section via a column selecting section for selecting and connecting one of the plurality of pairs of bit lines to the input/output section in response to a column address.

REFERENCES:
patent: 5297104 (1994-03-01), Nakashima
patent: 5404330 (1995-04-01), Lee et al.
patent: 5412331 (1995-05-01), Jun et al.
patent: 5444662 (1995-08-01), Tanaka et al.
"Dynamic RAM Circuits" by H.B. Bakoglu, Circuits Interconnections and Packaging for VLSI, pp. 155-161, 1990, Addison Wesley.

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