Semiconductor memory device capable of replacing faulty bit line

Details Semiconductor memory device capable of replacing faulty bit line Semiconductor memory device capable of replacing faulty bit line

1991-04-08

1993-07-13

Pascal, Robert J.

Static information storage and retrieval

Read/write circuit

Bad bit

371 103, 371 101, G11C 2900

Patent

active

052279995

ABSTRACT:
A semiconductor memory device has a plurality of pairs of bit lines and one or more pairs of redundant bit lines to replace faulty bit lines, if any. The redundant bit lines are connected with a first pair of data lines, which is connected to a differential amplifier, by respective second switches, and the bit lines are connected with a second pair of data lines by respective first switches. A third switch is provided between the first and second data lines, and the second data lines are connected to or disconnected from the first data lines by the third switch. There are also provided column decoders connected to the respective first switches and redundant column decoders connected to both the respective second switches and the third switch. When either redundant column decoder outputs a redundant signal for connecting the redundant bit lines to the first data lines, the third switch is turned off to disconnect the second data lines from the first data lines and therefore from the differential amplifier. On the other hand, when every redundant column decoder outputs a non-redundant signal for disconnecting the redundant bit lines from the first data lines, the third switch is turned on to connect the second data lines to the first data lines and therefore to the differential amplifier.

REFERENCES:
patent: 4729117 (1988-03-01), Osaka
patent: 4998223 (1991-03-01), Akaogi
patent: 5045720 (1991-09-01), Bae
patent: 5134585 (1992-07-01), Murakami et al.

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