Semiconductor memory device capable of reducing power consumptio

Details Semiconductor memory device capable of reducing power consumptio Semiconductor memory device capable of reducing power consumptio

1996-08-01

1998-01-13

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

36518909, G11C 1100

Patent

active

057085994

ABSTRACT:
A reference voltage generated in a Vref1 generating circuit is supplied from a corresponding applied voltage selector to respective backgates of access transistors in each SRAM cell constituting a column which is selected by a column decoder. On the other hand, a substrate voltage generated in a Vbb generating circuit is supplied from a corresponding applied voltage selector to respective backgates of access transistors in each SRAM cell constituting a column which is not selected by the column decoder.

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