Semiconductor memory device, capable of reducing power...

Details Semiconductor memory device, capable of reducing power... Semiconductor memory device, capable of reducing power...

2005-05-24

2005-05-24

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S204000, C365S208000

Reexamination Certificate

active

06898136

ABSTRACT:
A charge recycling circuit is driven to raise a potential of a restore node and a sensing bar node to a given potential before a sensing operation is performed. After the sensing operation is performed, electric charges discharged from the restore node and from the sensing bar node are stored using the charge recycling circuit and can then be used when a next sensing operation is performed. Therefore, current consumed when the sensing operation is performed can be reduced and the power consumption can be thus reduced.

REFERENCES:
patent: 5781487 (1998-07-01), Jang
patent: 5812445 (1998-09-01), Yamauchi
patent: 5886946 (1999-03-01), Ooishi
patent: 6392944 (2002-05-01), Kono
patent: 6512715 (2003-01-01), Okamoto et al.
patent: 6717875 (2004-04-01), Park

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