Semiconductor memory device capable of flash writing and method

Static information storage and retrieval – Read/write circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518905, 36523005, 36523009, 3652385, 365218, G11C 700, G11C 800

Patent

active

053413326

ABSTRACT:
A semiconductor memory device having flash write mode and initialized mode functions includes a flash write signal generation circuit for generating flash write signals FW and /FW, and a plurality of switching circuits 30 each provided corresponding to one row in a memory cell arrays MA. The switching circuit 30 applies fixed data "0" or "1" to a memory cell connected to one row selected by a row decoder 10, in response to the flash write signal FW or /FW. Because it is not necessary to activate a column decoder when the flash write or the initialized mode operation is conducted, writing speed can be increased while power consumption can be reduced.

REFERENCES:
patent: 5003510 (1991-03-01), Kamisaki
patent: 5134589 (1992-07-01), Hamano
patent: 5140553 (1992-08-01), Choi
patent: 5155705 (1992-10-01), Goto
patent: 5187684 (1993-02-01), Hoshino
patent: 5255243 (1993-10-01), Kitazawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device capable of flash writing and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device capable of flash writing and method , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of flash writing and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-507753

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.