Semiconductor memory device capable of fast sensing operation

Details Semiconductor memory device capable of fast sensing operation Semiconductor memory device capable of fast sensing operation

1999-07-23

2000-04-18

Nelms, David

Static information storage and retrieval

Read/write circuit

Differential sensing

365205, 365149, G11C 702

Patent

active

060523247

ABSTRACT:
With bit lines connected to a sense amplifier, a sense drive line is overdriven to a level above a predetermined level via a coupling capacitance element, and is held at the predetermined voltage level after elapsing of a predetermined time period. Even with a low power supply voltage, a semiconductor memory device can perform sense operation at high speed.

REFERENCES:
patent: 4951256 (1990-08-01), Tobita
patent: 5007024 (1991-04-01), Tanaka et al.
patent: 5471425 (1995-11-01), Yumitori et al.
patent: 5570047 (1996-10-01), Makino et al.
"A 0.9 V Sense-Amplifier Driver for High-speed Gb-Scale DRAMs",K. Gotoh et al., 1996 Symposium on VLSI Circuits Digest of Technical Papers, pp. 108-109.

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