Semiconductor memory device capable of compensating for...

Details Semiconductor memory device capable of compensating for... Semiconductor memory device capable of compensating for...

2007-07-24

2007-07-24

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S210130

Reexamination Certificate

active

11220294

ABSTRACT:
A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.

REFERENCES:
patent: 4371956 (1983-02-01), Maeda et al.
patent: 6343039 (2002-01-01), Agawa et al.
patent: 6487113 (2002-11-01), Park et al.
patent: 6683313 (2004-01-01), Chen et al.
patent: 2004/0022085 (2004-02-01), Parkinson et al.
patent: 2005/0219914 (2005-10-01), Sarin et al.

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