Semiconductor memory device capable of changing ECC code length

Details Semiconductor memory device capable of changing ECC code length Semiconductor memory device capable of changing ECC code length

2011-08-16

2011-08-16

Rizk, Sam (Department: 2112)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

C714S752000, C714S758000, C714S769000

Reexamination Certificate

active

08001450

ABSTRACT:
The data memory cell array and parity memory cell array in the memory cell array has a constitution that is capable of corresponding with a plurality of ECC code lengths. An input-side parity generation circuit that generates parities from write data, an output-side parity generation circuit that generates parities from read data, and a syndrome generation circuit that generates a syndrome bit that indicates an error bit from the read parity bits and generated parity bits are constituted so as to be capable of switching, according to the plurality of ECC code lengths.

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patent: 2004/0243887 (2004-12-01), Sharma et al.
patent: 2005-044386 (2005-02-01), None

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