Semiconductor memory device capable of carrying out a read-out o

Details Semiconductor memory device capable of carrying out a read-out o Semiconductor memory device capable of carrying out a read-out o

1999-03-30

2000-08-22

Nelms, David

Static information storage and retrieval

Systems using particular element

Semiconductive

36518904, G11C 1134

Patent

active

061082341

ABSTRACT:
A semicomductive memory device has a memory cell connected to a word line and a digit line. The memory cell is for memorizing data of two bits in correspondence to first through fourth threshold voltages. The first threshold voltage is lower than the second threshold voltage which is lower than the third threshold voltage. The third threshold voltage is lower than the fourth threshold voltage. The semicomductive memory device has a supplying section for selectively supplying first through third read-out voltages with the word line. The first read-out voltage has a value between the first and the second threshold voltages. The second read-out voltage has a value between the second and the third threshold voltages. The third read-out voltage has a value between the third and the second threshold voltages. The supplying section supplies the second read-out voltage to the word line at first. A reading section is connected to the digit line and reads the data out of the memory cell in accordance with the first through the third read-out voltages.

REFERENCES:
patent: 4503518 (1985-03-01), Iwahashi
patent: 5835406 (1998-11-01), Chevallier et al.
patent: 5852575 (1998-12-01), Sugiura et al.
patent: 5953274 (1999-09-01), Iwahashi

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