Semiconductor memory device capable of burn in mode operation

Details Semiconductor memory device capable of burn in mode operation Semiconductor memory device capable of burn in mode operation

1997-10-16

1999-06-29

Nelms, David

Static information storage and retrieval

Read/write circuit

Testing

G11C 1300

Patent

active

059177659

ABSTRACT:
A semiconductor integrated circuit device realizing high speed operation and low current consumption and ensure reliability evaluation is provided. Reference voltage generating circuits for generating reference voltages of mutually different voltage levels are provided for power supply pads respectively, and voltage down converters for down converting power supply voltages of corresponding external power supply pads to corresponding reference voltage levels and transmitting the lowered voltages to corresponding internal power supply lines are provided corresponding to respective reference voltage generating circuits. Further, a switching transistor is provided at an output node of the reference voltage generating circuit which is rendered conductive at a stress acceleration mode for connecting the corresponding external power supply pad to the output node of the corresponding reference voltage generating circuit.

REFERENCES:
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5554953 (1996-09-01), Shibayama et al.
ULSI DRAM Technology, published by Science Forum Co., Ltd. Sep. 25, 1992.
Advanced Electronics I-9 VLSI Memory, published by Baifu-kan Co., Ltd., Nov. 5, 1994.

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