Semiconductor memory device capable of applying stress...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S200000, C365S230060, C365S230080

Reexamination Certificate

active

07009897

ABSTRACT:
A write buffer drives in a normal operation a level in potential of an I/O line pair in accordance with data externally input to be written, whereas a burn in write buffer is controlled in a test operation by a control circuit to drive the I/O line pair in level. A column address decoder in the test operation is controlled by the control circuit to select simultaneously a plurality of bit line pairs capable of coupling with a single I/O line pair.

REFERENCES:
patent: 5471429 (1995-11-01), Lee et al.
patent: 6111801 (2000-08-01), Brady
patent: 6160745 (2000-12-01), Hashimoto
patent: 6219285 (2001-04-01), Murakuki et al.
patent: 6310807 (2001-10-01), Ooishi et al.
patent: 6341089 (2002-01-01), Sawada et al.
patent: 6603691 (2003-08-01), Yoo et al.
patent: 6667915 (2003-12-01), Yonezu et al.
patent: 11-120794 (1999-04-01), None

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