Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-18
2010-11-09
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29129
Reexamination Certificate
active
07829933
ABSTRACT:
A write and erase method of a semiconductor memory device includes a floating gate type transistor having a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a floating gate electrode formed on the gate insulating film, and a control gate electrode opposing the floating gate electrode with a hollow portion being sandwiched therebetween. A capacitance between the semiconductor substrate and the control gate electrode is controlled by one of an operation of forming, in the hollow portion, an electrical path which electrically connects the floating gate electrode and the control gate electrode, and an operation of eliminating the electrical path.
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patent: 7214587 (2007-05-01), Pinnow et al.
patent: 2008/0197400 (2008-08-01), Aritome
Vacuum Sealed Silicon Rich Oxide EEPROM Cell, Nov. 1, 1991, IBM Technical Disclosure Bulletin, vol. 34, Issue 6, pp. 238-241.
K. Terabe, et al., “Quantized conductance atomic switch”, Nature Publishing Group, vol. 433, Jan. 6, 2005, pp. 47-50.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wilson Allan R
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