Semiconductor memory device and test method therefor

Details Semiconductor memory device and test method therefor Semiconductor memory device and test method therefor

1997-01-13

1998-06-02

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Testing

365200, 365203, G11C 700

Patent

active

057611416

ABSTRACT:
A switching circuit for switching a bit line potential VBL of a DRAM to a power supply potential Vcc, an intermediate potential Vcc/2 or the ground potential GND is provided. In normal operation, the bit line potential VBL is set to Vcc/2. In a special write mode, Vcc or GND is applied to all the bit lines through an equalizer, a desired word line is raised to "H" level, and Vcc or GND is written to the storage nodes of all the memory cells connected to the word line. It is possible to write Vcc or GND even to the storage node of a memory cell which has been replaced by a redundant memory cell.

REFERENCES:
patent: 5079743 (1992-01-01), Suwa et al.

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