Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2009-02-10
2010-11-16
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S205000, C365S207000, C365S210100, C365S230030, C365S230060
Reexamination Certificate
active
07835169
ABSTRACT:
A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.
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Gohou Yasushi
Iwanari Shunichi
Matsuura Masanori
Murakuki Yasuo
Nakao Yoshiaki
Ho Hoai V
McDermott Will & Emery LLP
Panasonic Corporation
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