Static information storage and retrieval – Powering
Reexamination Certificate
2006-04-18
2006-04-18
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Powering
C365S227000, C365S229000
Reexamination Certificate
active
07031220
ABSTRACT:
A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.
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Maeda Noriaki
Shinozaki Yoshihiro
Watanabe Noriyoshi
Yamaoka Masanao
Hitachi ULSI Systems Co. Ltd.
Miles & Stockbridge P.C.
Nguyen Tan T.
Renesas Northern Japan Semiconductor, Inc.
Renesas Technology Corp
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