Semiconductor memory device and semiconductor integrated...

Details Semiconductor memory device and semiconductor integrated... Semiconductor memory device and semiconductor integrated...

2006-04-25

2006-04-25

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Hardware for storage elements

Magnetic

C365S149000, C365S189080

Reexamination Certificate

active

07035128

ABSTRACT:
In a DRAM memory cell including an access Tr and a cell capacitor, a depletion type MOSFET is used for each of the access Tr and the cell capacitor. Thus, an operation margin can be increased and the number of necessary power supplied can be reduced, compared to a known DRAM.

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patent: 6631092 (2003-10-01), Yamasaki
patent: 6781915 (2004-08-01), Arimoto et al.
patent: 2002-522871 (2002-07-01), None
patent: WO 00/10171 (2000-02-01), None

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